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Micron Technology’s Heterogeneous Integration Group (HIG) is leading the development of High Bandwidth Memory (HBM) for AI and ML applications — a breakthrough in semiconductor miniaturization. Leveraging Through Silicon Via (TSV) technology, the team stacks DRAM dies and logic in a single package, achieving unmatched memory density and speed. This role focuses on nano-enabled reliability engineering to push the limits of advanced FinFET and TSV-based architectures.
Lead reliability engineering for cutting-edge HBM products at Micron Technology, Folsom. Collaborate across design, foundry, and R&D teams to assess, model, and optimize nanotechnology-enabled process reliability for FinFET nodes and TSV interconnects.
🔍 Job Details
| Title | Staff Foundry Technology Reliability Engineer – HBM |
|---|---|
| Organization/Publisher | Micron Technology |
| Work Location | Folsom, California, USA |
| Research Field | Nanotechnology, Semiconductor Reliability, Electrical Engineering |
| Funding Info | Competitive salary + bonus + stock options |
| Application Deadline | Not specified |
| Posted Date | August 2025 |
| Country | United States |
| Researcher Profile | Experienced Professional |
| Apply Button | Apply Now |
| Required Qualification | BS in EE/CS or related + 3+ years relevant experience |
| Required Experience | Foundry PDKs, CMOS design, EDA tools, reliability simulations |
| Salary Details | $114,000 – $280,000 USD |
Micron’s HIG team is pushing the frontiers of heterogeneous integration, delivering high-performance High Bandwidth Memory (HBM) solutions for AI/ML workloads that demand extreme memory bandwidth. This is not just incremental semiconductor work — it’s deep nanotechnology-enabled packaging, using TSV to vertically integrate multiple dies for minimal latency and maximum throughput.
In this role, you will define, assess, and optimize reliability specifications for advanced FinFET-based base dies and TSV interconnect structures. You’ll perform TMI_Aging simulations for both digital and custom flows, evaluate degradation due to BTI, HCI, SHE, TDDB, and set electromigration limits for TSV chains.
This is a critical position that demands expertise in statistical modeling, EDA-driven reliability verification, and compact device modeling. You’ll partner with cross-functional teams to ensure Micron’s HBM products meet rigorous performance and lifetime requirements, while innovating solutions for the next generation of AI memory architectures.
If your expertise lies at the intersection of nanotechnology, semiconductor reliability, and AI-driven hardware design, this role offers the opportunity to directly influence the industry’s most advanced memory solutions.
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Disclaimer
This job description is for informational purposes only and may be updated or modified by Micron Technology without prior notice. Please refer to Micron’s official careers page for the latest details and application instructions.
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