Micron Technology is hiring a Senior/Principal NAND Device Engineer in Singapore to drive innovation in next-generation NAND memory. This is a high-impact role for PhD/Master’s holders in Nanoscience, Semiconductor Devices, or Electrical Engineering, with expertise in NAND physics, electrical characterization, and device algorithm development.
🔍 Job Details
| Field | Nanotechnology, Semiconductor Physics, Electrical Engineering, Device Modeling, Algorithm Engineering, VLSI |
|---|---|
| Title | Senior/Principal NAND Device Engineer |
| Organization | Micron Technology Inc. |
| Work Location | Singapore |
| Research Field | NAND Flash Device Engineering, Nanoelectronics, Device Physics, Memory Technology |
| Funding Info | Full-time salaried role |
| Application Deadline | Rolling (Apply ASAP) |
| Posted Date | July 2025 |
| Country | Singapore |
| Researcher Profile | Senior-level engineer or PhD researcher with experience in NAND/semiconductor physics |
| Apply | Apply Now |
| Required Qualification | PhD or Master’s in Nanoscience, Electrical Engineering, or related fields |
| Required Experience | Expertise in NAND device physics, memory algorithms, electrical characterization |
| Salary Details | Competitive salary with full benefits, including relocation and global R&D exposure |
📘 Detailed Blog Post
Join Micron Technology’s Device Technology Development group in Singapore as a Senior or Principal NAND Device Engineer and help define the future of NAND flash memory.
You will work on state-of-the-art NAND cell devices, using your expertise in semiconductor device physics, memory array operation, and trim/waveform optimization to enhance performance and reliability.
Key responsibilities include:
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Analyzing NAND device characteristics and engineering cell architecture improvements
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Performing electrical characterization of NAND cells and test structures
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Driving feedback loops with Process Integration, Cell Engineering, and Algo Teams
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Developing first-principles-based solutions for cell performance, VT placement, and scaling challenges
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Collaborating with global R&D hubs in Singapore and Boise, Idaho (USA)
This is a front-line R&D opportunity to shape the most advanced NAND technologies globally – from device physics to wafer-scale performance optimization.
👤 Candidate Profile
Micron is seeking innovators who:
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Hold a PhD or Master’s degree in Nanoscience, Electrical Engineering, or Semiconductor Physics
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Have deep understanding of nonvolatile memory (NAND) operation and optimization
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Understand device modeling, VT placement, and array engineering
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Have prior experience in algo/firmware collaboration and trim/waveform tuning
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Thrive in fast-paced global R&D teams and complex problem-solving environments
Added advantages:
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Background in semiconductor fab processes
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Strong statistical skills
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Experience with probe/test engineering or memory reliability studies
🌏 About Micron Technology
Micron Technology is a world leader in memory and storage solutions. With innovation at its core, Micron delivers high-performance DRAM, NAND, and NOR products used across AI, 5G, cloud computing, and consumer electronics.
Why join Micron:
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Be part of a global leader in semiconductor R&D
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Collaborate with experts across Asia-Pacific, North America, and Europe
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Work on mission-critical memory products that power the future of information
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Access continuous learning, mentorship, and global exposure
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Micron is committed to inclusion, sustainability, and employee well-being
📎 Reference Links
✅ Apply Now – NAND Device Engineering Role
#NanotechnologyJobs #NANDFlash #SemiconductorEngineering #MicronCareers #Nanoelectronics #DevicePhysics #SingaporeJobs #VLSICareers #MemoryTech
✅ Disclaimer: This listing is compiled from publicly available data as of July 2025. Candidates are encouraged to verify current details and apply directly through Micron Careers.
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